InGaAsP/InP Electroabsorption Modulator with Single-Sided Large Optical Cavity by Low-Pressure MOCVD-Reference-Cited by-同舟云学术

InGaAsP/InP Electroabsorption Modulator with Single-Sided Large Optical Cavity by Low-Pressure MOCVD

Published:2007-11 Issue: Volume:31 Page:246-248
ISSN:1662-8985
Container-title:Advanced Materials Research
language:
Short-container-title:AMR

Author:

Yang H.¹,Chin M.K.¹,Lim Desmond C.S.²,Lee S.Y.¹,Lee C.W.¹,Zhu H.L.³

Affiliation:

1. Nanyang Technological University

2. DSO National Laboratories

3. Institute of Semiconductors

Abstract

An InGaAsP/InP Electroabsorption Modulator (EAM) with single-sided large optical cavity (LOC) was studied and fabricated by low-pressure Metal Organic Chemical Vapor Deposition (MOCVD). Results show that the optical profile of EAM is greatly improved by the LOC structure, which is expected to increase the coupling efficiency and the optical saturation power.

Publisher

Trans Tech Publications, Ltd.

Subject

General Engineering

Link

https://www.scientific.net/AMR.31.246.pdf

Reference4 articles.

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