Self-Diffusion in Silicon
Author:
Affiliation:
1. De Montfort University
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Radiation
Link
https://www.scientific.net/DDF.153-155.69.pdf
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Point Defects in Semiconductors;Physical Chemistry of Semiconductor Materials and Processes;2015-08-07
2. Formation and migration energies of a vacancy and an interstitial in a high-purity Si crystal determined by detecting complexes of point defects and hydrogen: Evaluation of activation energies of self-diffusion;Japanese Journal of Applied Physics;2014-08-21
3. Vacancy formation energy in Czochralski-grown Si crystals determined by a quenching method;Journal of Applied Physics;2011-10-15
4. Point defects generated by oxidation of silicon crystal surface;Physica B: Condensed Matter;2009-12
5. Vacancy formation during oxidation of silicon crystal surface;Applied Physics Letters;2008-09-08
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