Fabrication of Ge30Te 70-xSbx Glasses Alloys and Studying the Effect of Partial Substitution on D.C Electrical Energy Parameters

Abstract

The non-linear components has been emphasized for its multiple applications in rewritable recording and data storage devices. Chalcogenide glasses materials are promising due to their high refractive index. In this paper, alloys for Ge30Te 70-xSbx glasses semiconductor (where x =0.0, 5, 10, 15 and 20) will be fabricated by melt quenching method. The effect of partial substitution on DC electric power parameters, and its knowledge of electrical conduction mechanisms, were investigated to determine the effect of Antimony on the density of extended states, local states, and in Fermi energy states. The electrical measurements revealed the existence of three conduction mechanisms depend on the temperature: at high temperature the conduction will be in the extended state. The local states are responsible at medium temperature, and at low temperature it will related to the Fermi level. The effect of partial substitution had produced change in all electrical conductivity parameters including the (extended, localized, and Fermi) density of states, the activation energy, tail width (ΔE), hoping transition distance (R), and interatomic distances a.