A Novel 4-bit 10Gsps ADC in 180nm SiGe Bicmos Process

Abstract

In this paper, a novel 4-bit ADC is presented. The ADC adopts interpolated flash architecture with eight preamplifiers followed by fifteen latches. The ECL technique is used in the design of the ADC. Because of the novel design techniques adopted in the ADC, the conversion rate is very fast, up to 10Gsps, which has been proved by the stimulation results.