Affiliation:
1. Lanzhou Jiaotong University
Abstract
Physical mechanism for switching state of SITHs was discussed, the two-dimensional turn-off model was proposed, expressions of ton and toffwere mathematical derived. Measures to reduce the switching time of SITHs, such as reducing the gate width WG and n- region width Wn-, doping Boron atoms with higher density,etc.,were put forward and verified by experiments.
Publisher
Trans Tech Publications, Ltd.
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