Modeling of Vertical GaN Based Resonant Cavity Light-Emitting Diode

Abstract

Vertical structure of resonant cavity light-emitting diode (RCLED) is presented in this paper to further improve the photoelectric performance of the device. Modeling and 2D simulation have been proceeded with Crosslight APSYS[, the analysis and modeling software for semiconductor devices. Main results of the simulation are listed and discussed. The peak wavelength locates at about 550 nm with half-wave width of about 10 nm and its output power has been enhanced by 25% than the conventional one. The results prove that vertical RCLED is a considerable source for POF-based fiber communication.