Influence of Various Tin Ion Doped Amount on the Dielectric Properties of BMNS Ceramics

Abstract

Bi2 (Mg1/3Nb2/3-xSnx)2O7(BMNS)(x=0.1,x=0.15,x=0.2,x=0.25 mol) ceramics was prepared by traditional solid-state reaction method and the influence of tin ion doped amount on the dielectric properties and structure of BMNS ceramics were investigated. The results show that all of the doped samples keep a single monoclinic pyrochlore phase and there is no second phase observed. The grain size of ceramics gradually increases, the dielectric constant decreases first and then increases, the dielectric loss increases first and then decreases and the density reduces with the increase of tin ion doped amount. The density of ceramics increases first then decreases with the increase of sintering temperature. The BMNS ceramics sintered at 980 °C with 0.25 mol tin ion doping amount has a biggest density and the best properties,whose εr is 155(1MHz),tanδ is 0.0011(1MHz), the bulk density is 7.62 g/cm3.