Affiliation:
1. National Formosa University
2. Chia-yi Jhong-he Junior High School
Abstract
This paper is based on theoretical methods to study the computer simulation and analysis of the growth of semiconductor thin films. First, according to the traditional theory of thin-film growth, the relationship between the growth morphology and the physical parameters are discussed. Then, fractal theory has been applied to improve the diffusion-limited aggregation (DLA) model. And the simulations of the two-dimensional and three-dimensional thin-film growth are proposed. A computer program of the simulation of the thin-film growth is developed with help of MATLAB. Finally, the results of the simulation of the thin-film growth have been analyzed by the fractal dimension and multifractal spectra. The results of this paper can be applied to the dynamic simulation of nanometer thin-film growth, and an effective simulation tool is to provide the semiconductor process.
Publisher
Trans Tech Publications, Ltd.
Reference9 articles.
1. B.B. Mandelbrot: Fractal: Form, Chance, and Dimension (W.H. Freeman Publications, San Francisco 1977).
2. B.B. Mandelbrot: The Fractal Geometry of Nature (W.H. Freeman Publications, San Francisco 1982).
3. B.B. Mandelbrot, D.E. Passoja and A. Paully: Nature Vol. 308 (1984), p.721.
4. J. Feder: Fractals (Plenum Press, New York 1988).
5. K.J. Falconer: Fractal Geometry: Mathematical Foundations and Application (John Wiley and Sons Press, New York 1991).