Heat Transfer Improvement between Copper Film and Ceramic Substrate by Thermal Treatment

Abstract

This study presents the variation of the thermal resistance of a system Cu/Ceramic in relation with the parameters of the development process. More particularly, a thermal treatment is applied to this system with the aim of improving heat transfer both within the film and at the film/substrate interface. The obtained results show a very significant decrease of the effective thermal resistance with a thermal treatment at 300 °C during one hour. These effects on heat transfer were highlighted with the study of the chemical composition within the interface by using depth profiles carried out by X-ray photoelectron spectroscopy (XPS). The deconvolution of the system shows that the interface thickness initially of roughly 20 nm reaches 50 nm after treatment. All these results are discussed in relation with the adhesion force, the porosity and the nucleation phenomena in the film.