Design of NDR-Based Oscillators Suitable for the Nano-Based BiCMOS Technique

Author:

Gan Kwang Jow1,Jiang Zheng Jie1,Tsai Cher Shiung2,Chan Din Yuen1,Huang Jian Syong1,Kao Zhen Kai1,Yeh Wen Kuan3

Affiliation:

1. National Chiayi University

2. Kun Shan University

3. National University of Kaohsiung

Abstract

We present three oscillator designs using the negative-differential-resistance (NDR) circuit which is composed of several Si-based metal-oxide-semiconductor field-effect transistor (MOS) devices and one SiGe-based heterojunction bipolar transistor (HBT) devices. These oscillator circuits are composed of the NDR circuit, resistor, inductor, and capacitor. The oscillation frequencies are about several GHz based on the HSPICE simulation results. The circuits are designed using a standard 0.18 μm BiCMOS technique. Because our circuits are mainly made of a BiCMOS-NDR circuit that is different from a tradition NDR device made by a resonant tunneling diode with a quantum-well structure, we can utilize the nanobased BiCMOS process to implement these circuits by further improving the parameters.

Publisher

Trans Tech Publications, Ltd.

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