Effect of Argon Pressure on the Structure and Resistivity of Dc Magnetron Sputtered LaB6 Films

Abstract

A series of Si (100) based LaB6films were deposited by D.C. magnetron sputtering with different argon pressure, one of the most important deposition parameters, which affect both the structure and properties of the thin films. XRD, AFM, Raman, and Hall measuring instrument were used to characterize the film structure and performances. It was found that argon pressure strongly influenced the condensing particles’ kinetic energy obviously through affecting the scattering processes of sputtered energetic particles, which played a crucial role in the growth of the LaB6films. LaB6film deposited at 1.0 Pa showed a higher crystallinity degree. Morever, the film displayed a more uniform structure and better electrical property, the relationship between microsture, electrical property and crystallinity were demonstrted as well.