The Properties of Al2O3 Films Deposited onto Al2O3-TiC and Si Substrates by RF Diode Sputtering

Abstract

The Al2O3 films were deposited onto Al2O3-TiC and Si (100) substrates by RF sputtering technique by varying powers sputter target, substrate bias voltages and fixed process pressure 25 mTorr which aim to achieve high deposition rate and investigated film properties onto different types. Result showed significant power sputter target to deposition rate both substrates and film properties depend on type of substrate. The power sputter target at 8kW and substrate bias voltage at -150 V is optimum deposition condition to provide deposition rate is 53.97nm/min for Al2O3-TiC substrate and 51.50nm/min for Si substrate. The Al2O3 film deposited onto Al2O3-TiC substrate surface morphology displayed rather roughness than Al2O3 film deposited onto Si substrate which verified from SEM and AFM as 0.99 nm (Ra) versus 0.46 nm (Ra). The film stress, hardness, reduces modulus and breakdown voltage (BDV) of Al2O3 film deposited were higher than Al2O3 film deposited on Al2O3-TiC substrates which were correspond to surface morphology.