Affiliation:
1. Universiti Sains Malaysia
Abstract
Spin coating growth and characterisations ofc-oriented wurtzite structure gallium nitride (GaN) thin film on silicon (Si) substrate with (100) orientation was reported. The precursor solution consisted of a readily available gallium (III) nitrate hydrate powder, ethanol and diethanolamine as starting material, solvent and surfactant. All the structural and optical results showed thatc-oriented wurtzite GaN thin film was deposited on Si (100) substrate. Compared with earlier reported work using sol-gel deposition, significant improvements in the structural quality of the GaN thin film were observed. The FWHM value of the thin film was approximately 2.60°. The framework described here is both an easy in setup and simple method as compared to other method such as MBE, MOCVD, and radio frequency sputtering to producec-oriented wurtzite structure GaN thin film.
Publisher
Trans Tech Publications, Ltd.
Reference19 articles.
1. S. Strite, M.E. Lin, H. Morkoq, Progress and prospects for GaN and the III-V nitride semiconductors, Thin Solid Films 231 (1993) 197-210.
2. P. Kung, M. Razegui, III Nitride wide bandgap semiconductors: A survey of the current status and future trends of the materials and device technology, Opto-Electronics Review 8 (2000) 201-239.
3. H. Morkoc, Nitride Semiconductors and Devices, Springer, Heidelberg, (1998).
4. K. Sardar, R. Raju, G.N. Subbanna, Epitaxial GaN films deposited on sapphire substrates prepared by the sol-gel method, Solid State Commun. 125 (2003) 355-358.
5. M. Puchinger, T. Wagner, D. Rodewald, J. Bill, F. Aldinger, F.F. Lange, Gallium nitride thin layers via a liquid precursor route, J. Cryst. Growth 208 (2000) 153-159.