Aluminum-Copper Bilayers Thin Films Deposited at Room Temperature by RF Magnetron Sputtering
Author:
Affiliation:
1. Universiti Teknologi Malaysia
2. Universiti Teknikal Malaysia Melaka
3. Universiti Tun Hussein Onn Malaysia (UTHM)
Abstract
Publisher
Trans Tech Publications, Ltd.
Link
https://www.scientific.net/AMM.606.105.pdf
Reference11 articles.
1. Pfiefer S., Grossmann, S., Freudenberger, R., Willing, H., Kappl, Characterization of Intermetallic Compounds in Al-Cu-Bimetallic Interfaces. Electrical Contacts (Holm), IEEE 58th Holm Conference, (2012).
2. Wenjie Zhang, Leeward Yi, Pingyi Chang, Jin Wu, A method for AlCu interconnect electromigration performance perdicting and monitoring, Microelectronic Engineering, 85 (2008) 577-581.
3. J. A. Rayne, M. P. Shearer and M. L. Bauer, Investigation of interfacial reactions in thin filmcouples of aluminum and copper by measurement of low temperature contact resistance, Thin Solid films, (65). (1988), 381-391.
4. H. Xu, C. Liu, V.V. Silberschmidt, Behavior of aluminum oxide, intermetallics and voids in Cu–Al wire bonds, Acta Materialia. 59 (2011) 5661–5673.
5. H.T. G Hentzell, R. D Thompson, K. N Tu, Motion of W maker during sequential compound formation in bimetallic Al-Cu thin films, 2 (1984) 81-84.
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