Affiliation:
1. Nanjing Electronic Devices Institute
Abstract
A 100μm silicon carbide epilayer with mean doping concentration 6×1014 cm-3 was achieved on 3 inch silicon carbide substrate using a growh rate of 30 μm/h. Hydrogen gas foil rotation was adopted to improve the doping uniformity. The intra-wafer thickness and doping uniformity was 1.83% and 7.51%, respectively. Schottky diodes fabricated on this epilayer presented a breakdown voltage of 10kV. This is the first report of 10kV schottky diodes fabricated on silicon carbide epilayer made in China.
Publisher
Trans Tech Publications, Ltd.
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