Carbon-Rich Nanostructurated a-SiC on Si Heterostructures for Field-Effect Electron Emission

Author:

Nazarov A.N.1,Gordienko S.O.1,Lytvyn P.M.1,Stadnik A.A.1,Gomeniuk Y.Y.2,Vasin A.V.1,Rusavsky A.V.1,Nazarova T.M.3,Lysenko V.S.1

Affiliation:

1. National Academy of Sciences of Ukraine

2. V. Lashkaryov Institute of Semiconductor Physics

3. National Technical University of Ukraine “KPI”

Abstract

The paper describes emission properties of a new nanostructured material carbon-rich amorphous silicon carbide (a-SiC) deposited on silicon wafer. Proposed material technology demonstrates that the field enhancement factor of the electron emission of this material can reach 1000 with the current density of about 1x10-3A/cm2 and efficiency of electron emission ~10%. A good correlation between the charge transfer through the a-SiC layer and electron emission from the material in high vacuum is observed.

Publisher

Trans Tech Publications, Ltd.

Subject

General Engineering

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