The Ferroelectric Field Effect Transistor Simulation and Analysis-Reference-Cited by-同舟云学术

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The Ferroelectric Field Effect Transistor Simulation and Analysis

Published:2013-12 Issue: Volume:873 Page:850-854
ISSN:1662-8985
Container-title:Advanced Materials Research
language:
Short-container-title:AMR

Author:

Wang Qiang¹,Zhang Sun Hao Chen¹,Yu Zheng Dong¹,Hua Guo Ran¹

Affiliation:

1. Nantong University

Abstract

A ferroelectric field effect transistor (FFET) with the metal/ferroelectric/ semiconductor (MFS) structure is designed and simulated. The simulation results show that the drain current atVg=0 after polarized is decided byPrandPr/Ps. When increasingPr,Idenhanced. WhenPr/Psdecreases,Idincreases if the FFET is saturated. When a voltage (Vp=1.5v) is applied on the FFET,Idmay be stable and not sensitive to the variation ofPr/Ps. This FFET stable output voltage is decided byEc.

Publisher

Trans Tech Publications, Ltd.

Subject

General Engineering

Link

https://www.scientific.net/AMR.873.850.pdf

Reference9 articles.

1. Scott J F: Ferroelectrics (Springer USA 2000), p.241.

2. Zhang L L, Feng Y J, Xu Z, et al: Chinese Science Bulletin, Vol. 54(2009), No. 19, p.3489, (In Chinese).

3. Hiroshi Ishiwara: Current Applied Physics, Vol. 9 (2009), p. S2.

4. DAI Zhonghua, YAO Xi, etc: Chinese Science Bulletin, Vol. 51(2006), No. 8, p.1000.

5. Yan Lei, Tang Tingao, Huang Weining, et al: Chinese Journal of Semiconductors, Vol. 21 (2000), No. 12, p.1203 (in Chinese).

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