I-V Characterization Study of Porous Silicon Formation by Doubled-Cell Electrochemical Etching

Author:

Xiao Yong Yin1,Chen Xiu Hua1,Li Shao Yuan2,Ma Wen Hui2,Li Yu Ping1,He Jia Li1,Zhang Hui1,Li Jiao1

Affiliation:

1. Yunnan University

2. Kunming University of Science and Technology

Abstract

The anodic current-potential behaviors of PS fabrication by doubled-cell electrochemical etching method have been studied. There are three reaction regions: porous silicon formation region, a transition region and electropolishing region in I-V curves. Polishing current and the HF acid concentration has a directly proportional relationship, the electropolishing current of silicon increased with the increase of the concentration of HF, in a certain concentration range. The electropolishing current of silicon increased with increasing the sweep rate on the condition of the same HF concentration.

Publisher

Trans Tech Publications, Ltd.

Subject

General Engineering

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