Affiliation:
1. University of Electronic Science and Technology of China
Abstract
In order to improve the secondary electron emission coefficient of MgO, we propose to dope Al into MgO. The precursor was obtained by hydrothermal method in the condition of different reaction temperature, different filling volume and different reaction time by using urea, Mg (CH3COO)2and AlCl3. The Al-doping MgO crystallites powders were obtained by calcining the precursor. The crystal phase and morphology of the products were characterized by XRD and SEM. The results showed that the Al-doping MgO powders were cubic-shaped crystallites. The discharge characteristics of Al-doping MgO powders were tested in a chamber as when the panel was sealed in Ne and 7% Xe at 450 torr. As expected, the discharge voltage of the panel is lower with the Al-doping MgO protective layer than without that.
Publisher
Trans Tech Publications, Ltd.