Affiliation:
1. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory
2. Nanjing Electronic Device Institute
Abstract
4H-SiC JBS diode with breakdown voltage higher than 6.5 kV has been successfully fabricated on 4H-SiC wafers with epitaxial layer. In this paper, the simulation, the fabrication, and the electrical characteristics of 4H-SiC JBS diode were reported. The drift layer thickness and doping are 55 μm and 9×1014cm3respectively. 60 floating guard rings edge were fabricated as termination. The on-state voltage was 4 V at JF= 7A.
Publisher
Trans Tech Publications, Ltd.
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2 articles.
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