Electro-Thermal Effect Analysis on GaAs PHEMT Based on Physical Model

Author:

Wu Zhao Xi1,Fu Gui Cui1,Gu Han Tian1

Affiliation:

1. Beihang University

Abstract

Considering physical mechanisms, an electro-thermal effect model of GaAs pseudomorphic high electron mobility transistor (PHEMT) was proposed. The model included PAD capacitances, intrinsic elements and extrinsic elements, which represented the relationship of performance parameters to physical structure and temperature. By using this model, the effects of temperature to devices performance parameters could be analyzed, and the device's structure and materials' parameters could be optimized. A typical GaAs PHEMT was simulated in the EDA software. Thus, DC I-V characteristics and small-signal S parameters of PHEMT under varied temperatures could be given.

Publisher

Trans Tech Publications, Ltd.

Subject

General Engineering

Reference10 articles.

1. Wang, J. and Deng, X. C. Journal of Microwares, 15(1999), pp.63-67.

2. Freescale Semiconductor, Freescale Semiconductor's MET LDMOS Model.

3. Peter H. Aaen, Jaime A. Pl'a and John Wood. Modeling and Characterization of RF and Microwave Power FETs. Cambridge, UK: Cambridge University Press, (2007).

4. Ladbrooke, P. H., MMIC Design GaAs FETs and HEMTs. Norwood, MA: Artech House, (1989).

5. Zhang Xinghong, Cheng Zhiqun, Xia Guanqun and et al. Chinese Journal of Semiconductors , 20(1999), pp.989-993.

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