Platinum-Incorporating Graphene Counter Electrode for In2O3-Based DSSC with Various Annealing Temperatures

Abstract

Development of platinum incorporating graphene (pt/graphene) thin films was prepared by sol-gel method via chemical bath deposition (CBD). Indium oxide (In2O3) as photoanode and pt/graphene as counter electrode is used to analyse the characteristics and performance of dye-sensitized solar cell (DSSC). Different annealing temperatures of 200 oC, 250 oC and 300 oC were proposed for the counter electrode in this study. The changes in the structural properties were analyzed by means of X-ray Diffraction (XRD) and atomic force microscopy (AFM) analysis. AFM results indicated very rough surface area of graphene sheet where roughness values decreased linearly from 0.65 μm to 0.18 μm by an increment in annealing temperature. The In2O3-based DSSC exhibited good photovoltaic performance with power conversion efficiency (η), photocurrent density (Jsc), open circuit voltage (Voc) and fill factor (FF) of 0.47 %, 5.46 mA cm-2, 0.54 V and 0.36 respectively. The obtained structural and photovoltaic performance analysis was proposed as a suitable benchmark for pt/graphene counter electrode with In2O3-based DSSC.