Cone-Shaped Hard Carbon Films Grown by Inductively Coupled RF Plasma with RF or DC Bias Voltage

Abstract

A simple method capable of producing uniform, large-area cone arrays of carbon films was found in a planar inductively coupled RF plasma source. The technique employs a DC or RF bias to substrate holder. Si substrates were mechanically pretreated using diamond paste. Cone-shaped carbon crystals preferentially nucleate and grow on the scratches using relatively low bias. Variation of the depositing conditions enables control of the cone density, geometry, and height. The cone arrays are believed to can significantly improve the field emission properties and have a tempting perspective in the microelectromechanical system (MEMS).