The Study of Microstructure and Electric Resistivity of SiC Thin Films Produced by MF Magnetron Sputtering

Abstract

SiC films were prepared by mid-frequency (MF) magnetron sputtering with two targets (SiC and C) on monocrystalline Si(100) and Al2O3 substrates. During the study, different annealing temperatures and working pressures were set. The surface morphology of SiC films was studied by SEM, while structure was characterized using a conventional X-ray diffractometer. SEM images had shown the surface morphology of SiC films was related to substrates. It was also found that working pressure had a big influence on the structure of SiC films through the XRD patterns. The film was mainly based on 3C-SiC when working pressure wass 0.3Pa, and 4H-SiC when 0.6 Pa. Another conclusion was that the resistivity of 4H-SiC was larger than that of 3C-SiC.