Molecular Dynamic Simulation for Co Cluster Deposition on Si Substrate

Abstract

Molecular dynamic simulation for Co cluster deposition on Si substrate was investigated in this work. The surface roughness and the interface mixing will be evaluated for the deposited film quality under different incident energies and substrate temperatures. The effect of thermal annealing on the ability of gap filling will be discussed by a slip vector. The results indicate that the incident energy has dominant effect on the surface roughness, and there is a minimum surface roughness value around the incident energy of 8 eV. However, the substrate temperature has little effect on the surface roughness. For interface mixing, the simulation indicates the easy diffusion of Co atoms into Si substrate. However, increasing either the incident energy or the substrate temperature could not change much the mixing conditions. As for the ability of gap filling, it is clear that the thermal annealing does improve this ability and obtains better surface roughness and interface mixing.