Affiliation:
1. Mianyang Normal University
2. Guiyang University
Abstract
The pure barium is used as target to deposit Ba films on p-Si(111) substrates by magnetron sputtering system, then the films as-deposited are subsequently annealed by annealing furnace with various temperature. The crystal structure, surface morphology and electricity property of the films annealed are characterized by X-ray diffraction, scanning electron microscope and Hall-effect instrument, respectively. The results show the annealing temperature favoring orthorhombic BaSi2film growth is about 800°C.
Publisher
Trans Tech Publications, Ltd.