Interdependencies of Critical Radius, Critical Energy and Surface Energy (CRESE) in Silicon Self-Assembled Nanodots

Abstract

The interdependence parameters in the growth of silicon self-assembled nanodots are investigated. Accordingly, the critical radius, critical energy change and surface energy can be interpreted in terms of cubic function, where it produced a critical surface energy NS* and the corresponding r* and G*, called a CRESE point at a fixed growth temperature T when solved mathematically. It is defined as a limiting point at which equilibrium of the critical parameters take place at a constant temperature. Experiments were performed on the samples of amorphous silicon nanodots fabricated onto different non-crystalline substrates. A further analysis on the NS*-T plots revealed inverse linear relationships which converged at a CID point (o*,T*) when projected near the solidification temperature of silicon. The results suggested strong influence of atomic bonding at the nucleus-surface interface combined with higher surface roughness. In conclusion, there exists an equilibrium condition among the growth parameters which stabilizes the growth of amorphous silicon nanodots, as well as the existence of CRESE’s ideal destination (CID).