Affiliation:
1. Hefei University of Technology
Abstract
In this paper,CdTe thin films were successfully grown at higher source temperatures of 650 °C and 700 °C using close-spaced sublimation(CSS) and characterized by energy dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), scanning electron microscope (SEM), UV-Vis-NIR absorption spectra, respectively. The results indicated that the grain size of CdTe thin film increased from 1 μm to 5 μm with the increase of the source temperature from 650 °C to 700 °C. The direct band gaps of CdTe thin films prepared at different source temperatures of 650 °C and 700 °C were 1.44 and 1.43 eV, respectively.
Publisher
Trans Tech Publications, Ltd.
Cited by
2 articles.
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