Affiliation:
1. Platov South-Russian State Polytechnic University
2. Southern Scientific Center Russian Academy of Sciences
Abstract
The article contains a description of various growing conditions for isoparametric heterostructures based on InP. It is shown that the structural perfection of solid solutions grown on InP substrates is influenced by parameters, such as the temperature of the epitaxy process, the temperature gradient, and the composition and thickness of the liquid zone. By analyzing the quality of the surface and the structural perfection of isoparametric AlGaInAsP solid solutions, based on InP, optimal parameters of the zone recrystallization process in the temperature gradient field (TGZR), at which the epitaxial films had minimal roughness and high crystalline perfection, were found.
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics
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