Analysis of Si Wet Etching Effect on Wafer Edge
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Published:2016-09
Issue:
Volume:255
Page:97-101
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ISSN:1662-9779
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Container-title:Solid State Phenomena
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language:
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Short-container-title:SSP
Author:
Saito Suguru1,
Okuyama Atsushi1,
Takeo Kenji1,
Hagimoto Yoshiya1,
Iwamoto Hayato1
Abstract
We investigated the effect of Si wet etching on the vertical step at wafer edge. We found that the concave-convex shape appeared at the wafer edge after Si etching by the Atomic Force Microscopy analysis. From the liquid simulation and the detailed evaluation of Si etching rate, we revealed that the concave-convex shape was formed by the distribution of the fluid velocity at the wafer edge.
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics