Effect of Dilute Hydrogen Peroxide in Ultrapure Water on SiGe Epitaxial Process
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Published:2016-09
Issue:
Volume:255
Page:27-30
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ISSN:1662-9779
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Container-title:Solid State Phenomena
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language:
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Short-container-title:SSP
Author:
Masaoka Toru1,
Gan Nobuko1,
Fujimura Yu1,
Ogawa Yuichi1,
Wostyn Kurt2,
Pacco Antoine2,
Yoshida Yukifumi3,
Holsteyns Frank2
Affiliation:
1. Kurita Water Industries Ltd.
2. IMEC
3. SCREEN Semiconductor Solutions Co., Ltd.
Abstract
Ultrapure water contains dilute hydrogen peroxide as an impurity. In order to clarify an impact of the dilute hydrogen peroxide on cleaning processes, a SiGe epitaxial layer was deposited on a Si(100) wafer which surface was treated by HF last process with hydrogen peroxide contained UPW or hydrogen peroxide removed UPW. The defect in the SiGe epitaxial layer was reduced when the hydrogen peroxide removed UPW was used.
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics
Cited by
1 articles.
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