Affiliation:
1. Technische Universität Dresden
2. IPMS Fraunhofer
Abstract
A deep level transient spectroscopy (DLTS) study on n- and p-type diluted Si1-xGex alloys (x=0, 0.011, 0.026, 0.046, and 0.070) is presented. Defect levels of several carbon-hydrogen (CH) complexes are observed. The high-resolution Laplace-DLTS technique allows us to detect configurations of defects which contain different numbers of Ge atoms in the first and second-nearest neighbourhood of the CH complexes. The electrical properties of the defects will be analysed and their origin will be discussed.
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics
Reference11 articles.
1. A. Endrös, Phys. Rev. Lett., vol. 63, pp.70-73, (1989).
2. Y. Kamiura, M. Tsutsue, Y. Tamashita, F. Hashimoto, and K. Okuno, J. Appl. Phys., vol. 78, p.4478, (1995).
3. M. Yoneta, Y. Kamiura, and F. Hashimoto, J. Appl. Phys., vol. 70, pp.1295-1308, (1991).
4. O. Andersen, A. R. Peaker, L. Dobaczewski, K. B. Nielsen, B. Hourahine, R. Jones, P. R. Briddon, and S. Öberg, Phys. Rev. B, vol. 66, p.235205, (2002).
5. R. Stübner, Vl. Kolkovsky, and J. Weber, submitted to Appl. Phys. Lett, (2015).
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献