Tris(Trimethylsilyl)Germane (Me3Si)3GeH: A Molecular Model for Sulfur Passivation of Ge(111) Surfaces
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Published:2016-09
Issue:
Volume:255
Page:36-40
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ISSN:1662-9779
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Container-title:Solid State Phenomena
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language:
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Short-container-title:SSP
Author:
Okorn Gilbert1,
Fischer Roland1,
Steller Beate1,
Engesser Philipp2,
Okorn-Schmidt Harald2
Affiliation:
1. Graz University of Technology
2. LLRC OG
Abstract
Tristrimethylsilylgermane, (Me3Si)3GeH, was employed as a molecular model compound for hydrogen terminated Ge(111) surfaces. Time and temperature dependent NMR spectroscopy yielded rate constants for the reaction between (Me3Si)3GeH and elemental sulfur and allowed for the determination of the activation energy for this molecular model reaction to mimic germanium surface passivation.
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics