Defect Composition in Acceptor Doped ZnO Quantum Structures-Reference-Cited by-同舟云学术

Defect Composition in Acceptor Doped ZnO Quantum Structures

Published:2015-10 Issue: Volume:242 Page:391-395
ISSN:1662-9779
Container-title:Solid State Phenomena
language:
Short-container-title:SSP

Author:

Tchelidze Tamar¹,Kereselidze Tamaz¹

Affiliation:

1. Ivane Javakhishvili Tbilisi State University

Abstract

We investigated defect composition in ZnO quantum structures – quantum wells and nanowires doped with Ag impurity. We investigated the influence of space and dielectric confinement on ionization energies of acceptor and compensation donor centers. These calculations show that in nanowire there is a optimal range of radius where the creation of ionized donors compensating hole conductivity, and consequently, improvement of hole conductivity, is possible to suppress.

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics

Link

https://www.scientific.net/SSP.242.391.pdf

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