Pechini Sol-Gel Fabrication and Luminescent Properties of Lu2SiO5: Ln3+ (Ln=Tb,Ce) Thin Films

Abstract

Ln3+ (Ce3+ and Tb3+) -doped Lu2SiO5 thin films were fabricated by Pechini sol–gel method combined with spin-coating technique on silicon substrates. The results of XRD patterns indicate that the films are completely crystallized at 1100 °C, the AFM observation reveals that the phosphor films are uniform and crack-free, consisting of closely packed grains with an average size of 200-300 nm. The PL and PLE spectra show the characteristic emission for Tb3+ and Ce3+, the optimum concentrations are found for LSO:Tb3+ (8%) and LSO:Ce3+ (2%) with respectively, the effect of heat-treatment temperature on the luminescent properties is also investigated.