Surface Microrelief Transformation Induced by Laser during Thin Al Film Growth on the (001) GaAs by the CBE Method-Reference-Cited by-同舟云学术

Surface Microrelief Transformation Induced by Laser during Thin Al Film Growth on the (001) GaAs by the CBE Method

Published:2007-01 Issue: Volume:261-262 Page:25-30
ISSN:1662-9507
Container-title:Defect and Diffusion Forum
language:
Short-container-title:DDF

Author:

Lioubtchenko Dmitri V.¹,Briantseva Tatiana A.²,Markov I.A.³,Bullough Tim J.⁴

Affiliation:

1. Aalto University School of Science and Technology

2. Institute of Radio Engineering and Electronics RAS

3. Russian Academy of Sciences

4. University of Liverpool

Abstract

In this work microrelief transformation of the (001) GaAs surface due to thin Al film deposition by means of the CBE method has been observed. The growth process was monitored insitu using laser reflectometry. Investigations of samples formed, carried out using TEM-microscopy, show that one of the basic causes of the microrelief transformation is the laser assistance of metal growth. A laser with a low power is used in this work for Al layer composite control in CBE. It was found that, in spite of using a laser having a low power, it is possible to stimulate and guide the complex physical and chemical reactions between deposited Al atoms and the GaAs near-surface layer. It has been found that metal film growth with laser assistance is a non-equilibrium process. The shapes and dimensions of the grown islands depend upon the laser power.

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Radiation

Link

https://www.scientific.net/DDF.261-262.25.pdf

Reference11 articles.

1. T.A. Briantseva, Z.N. Lebedeva, I.A. Markov, T.J. Bullough and D.V. Lioubtchenko, App. Surf. Sci., 143 (1999) 223.

2. T.A. Briantseva, D.V. Lioubtchenko in: The Science and Technology of Millimetre Wave Components and Devices (Gordon and Breach Publishers, UK) (2001).

3. H.F. Matare, Defect Electronics in Semiconductors (Wiley-Interscience, New York) (1971).

4. R. Dingle, M. Fuer, C. Tu in: Selectively doped heterojunction transistor: materials and design in the book VLSI Electronics, Microstructure Science, v. 11, Eds N.G. Einspruch and W.R. Wisseman (Academic press, New York, 1985).

5. J.M. Poate, J.W. Mayer, Laser Annealing of Semiconductors (Academic Press, New York, 1982).

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