Diodes Fabricated by Electron Beam Doping (Superdiffusion)Technique in Semiconductors at Room Temperature

Author:

Wada Takao1,Fujimoto Hiroshi

Affiliation:

1. Nagoya Sangyo University

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Radiation

Reference33 articles.

1. For example, J. W. Corbett: Solid State Physics (Academic Press, New York, 1966), Supple. 7.

2. C. P. Flynn: Point Defect and Diffusion (Clarendon Press, Oxford, 1972).

3. T. Wada: Proc. 3 rd Int. Conf. Neutron Transmutation Doped Silicon (Copenhagen, 1981), ed. Jens Guldberg (Plenum, New York, 1981), p.447.

4. T. Wada and E. Matumoto: Inst. Phys. Conf. Ser. No. 59. (Bristol & London, 1981), p.347.

5. T. Wada and M. Takeda; Proc. 4 th Int. Con. Ion and Plasma Assisted Techniques (Kyoto, 1983), ed. T. Takagi (Institute of Electrical Engineering of Japan. Tokyo, 1983).

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