Point Defects Characterization in Quenched δ-Ni2Si as Deduced from Isothermal Magnetic Susceptibility Measurements
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Published:2008-02
Issue:
Volume:273-276
Page:312-317
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ISSN:1662-9507
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Container-title:Defect and Diffusion Forum
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language:
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Short-container-title:DDF
Author:
Jennane Adib1,
Sassi O.1,
Aride J.1,
Bernardini Jean2,
Moya Gérard3
Affiliation:
1. Laboratoire associé à l'AUF, LAF n°502, Ecole Normale Supérieure Takaddoum
2. Aix-Marseille Université
3. Université Paul Cézanne
Abstract
The behaviour of quenched defects in Ni2Si compound is studied by isothermal
susceptibility magnetic measurements. In the range of temperature 553-593K, where an
enhancement of susceptibility has been previously detected by isochronal measurements, an
activation energy (EA=2.5 ± 0.2 eV) is determined. This value is in agreement with the break-up of
3D nickel vacancy clusters, formed at lower temperatures, and the subsequent formation of nickel
rich defects via the released vacancies.
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Radiation