Process-Induced Diffusion Phenomena in Advanced CMOS Technologies-Reference-Cited by-同舟云学术

Process-Induced Diffusion Phenomena in Advanced CMOS Technologies

Published:2006-10 Issue: Volume:258-260 Page:510-521
ISSN:1662-9507
Container-title:Defect and Diffusion Forum
language:
Short-container-title:DDF

Author:

Pichler Peter¹,Burenkov Alexander¹,Lerch Wilfried²,Lorenz Jürgen¹,Paul Silke²,Niess Jürgen²,Nényei Zsolt²,Gelpey Jeffrey C.³,McCoy Steve³,Windl Wolfgang⁴,Giles Luis Felipe⁵

Affiliation:

1. Fraunhofer Institute of Integrated Systems and Device Technology (IISB)

2. Mattson Thermal Products GmbH

3. Mattson Technology Canada

4. The Ohio State University

5. Infineon Technologies AG

Abstract

The continuous scaling of electron devices places strong demands on device design and simulation. The currently prevailing bulk transistors as well as future designs based on thin silicon layers all require a tight control of the dopant distribution. For process simulation, especially the correct prediction of boron diffusion and activation was always a problem. The paper describes the model developed for boron implanted into crystalline silicon and shows applications to hot-shield annealing and flash-assisted rapid thermal processing.

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Radiation

Link

https://www.scientific.net/DDF.258-260.510.pdf

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1. On a computationally efficient approach to boron-interstitial clustering;Solid-State Electronics;2008-09

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