Affiliation:
1. AGH University of Science and Technology
Abstract
Chemical diffusion in TiO2-x within n - p transition regime has been studied. In this regime several point defects such as oxygen vacancies, • • O V , titanium interstitials, • • • i Ti and • • • • i Ti , electrons, ' e , and electron holes • h are present with comparable concentrations. Based on defect structure in TiO2-x the relationship between chemical diffusion coefficient and self-diffusion coefficients of both titanium and oxygen were deduced.
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Radiation
Cited by
1 articles.
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