H Interacting with Intrinsic Defects in Si-Reference-Cited by-同舟云学术

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H Interacting with Intrinsic Defects in Si

Published:1995-11 Issue: Volume:196-201 Page:933-938
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Bech Nielsen B.,Hoffmann L.,Budde M.,Jones R.¹,Goss Jonathan P.²,Öberg Sven³

Affiliation:

1. University of Exeter

2. University of Newcastle

3. Luleå University of Technology

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.196-201.933.pdf

Cited by 80 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Theory of reactions between hydrogen and group-III acceptors in silicon;Physical Review B;2023-07-28

2. Concentrations and diffusion coefficients of thermal equilibrium point defects in silicon crystals;Japanese Journal of Applied Physics;2022-06-21

3. Editors’ Choice—Vibrational Properties of Oxygen-Hydrogen Centers in H+- and D+-Implanted Ga2O3;ECS Journal of Solid State Science and Technology;2020-12-01

5. Si isotopic structure of the infrared absorption of the fully hydrogenated vacancy in silicon;The Journal of Chemical Physics;2013-05-14

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