Impact of Proton Irradiation on Power 4H-SiC MOSFETs

Abstract

Impact of 15 MeV proton irradiation on electrical characteristics and low frequency noise has been studied in high-power vertical 4H-SiC MOSFETs of 1.2 kV-class at doses 1012 £ F £ 1014 cm-2. The maximum value of the field-effect mobility µFЕ depends weakly on F up to F = 2×1013 cm-2. At F = 4×1013 cm-2, the character of the µFЕ(Vg) dependence changes radically. The maximum µFЕ decreases approximately threefold. The dose Fcr corresponding to the complete degradation of the device is about 1014 cm-2. It can be estimated as Fcr» he/n0, where he is the electron removal rate and n0 is the initial electron concentration in the drift layer. In the entire frequency range of analysis f, gate voltages, and drain-source biases, the frequency dependence of the current spectral noise density SI(f) follows the law SI ~ 1/f. From the data of noise spectroscopy, the density of traps in the gate oxide Ntv has been estimated. In non-irradiated structures, Ntv » 5.4×1018 cm-3eV-1. At Ф = 6×1013 cm-2, the Ntv value increases to Ntv » 7.2×1019cm-3eV-1. The non-monotonic behavior of the output current Id and the level of low frequency noise on dose F has been demonstrated.