Donors in Wurtzite GaN Films: A Magnetic Resonance and Photoluminescence Study
Author:
Affiliation:
1. Naval Research Laboratory
2. American Society for Engineering Education
3. University of South Carolina
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://www.scientific.net/MSF.143-147.99.pdf
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. gvalues of effective mass donors inAlxGa1−xNalloys;Physical Review B;2001-04-04
2. Photoluminescence in GaN and InGaN and their applications in photonics;Handbook of Advanced Electronic and Photonic Materials and Devices;2001
3. Chapter 3 Growth and optical properties of GaN;Processing and Properties of Compound Semiconductors;2001
4. Magnetic resonance studies of defects in GaN and related compounds;III-Nitride Semiconductors: Electrical, Structural and Defects Properties;2000
5. Optical properties of residual shallow donors in GaN epitaxial layers grown by horizontal LP-MOCVD;Applied Physics A: Materials Science & Processing;1998-11-01
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