Symmetric (011)Tilt Grain Boundaries in Si and Ge: Interfacial Dislocation Concept-Reference-Cited by-同舟云学术

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Symmetric (011)Tilt Grain Boundaries in Si and Ge: Interfacial Dislocation Concept

Published:1993-01 Issue: Volume:126-128 Page:73-76
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Putaux Jean-Luc¹,Thibault J.,Jacques Alain²,George A.

Affiliation:

1. Centre d'Etude de Chimie Métallurgique, CNRS-Université Paris XII

2. Nancy Université

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.126-128.73.pdf

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Order-Disorder Transition at a Σ=17 Tilt Boundary in Cu3Au;Stability of Materials;1996

2. The [001] antiphase boundaries at the order–disorder transition of Cu3Au;C,H,N and O in Si and Characterization and Simulation of Materials and Processes;1996

3. Wetting at the Σ = 5[001] twist boundary of Cu3Au;Computational Materials Science;1994-09

4. A comparative study of the Sigma =5 and 13 (001) twist boundaries in Cu3Au;Journal of Physics: Condensed Matter;1994-07-18

5. Comparison of the constrained and unconstrained Monte-Carlo method: The case of Cu3Au;Solid State Communications;1994-05

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