High Temperature Gate Voltage Step-by-Step Test to Assess Reliability Differences in 1200 V SiC MOSFETs

Author:

Mengotti Elena1,Bianda Enea1,Wirths Stephan1,Baumann David1,Bettega Jason1,Jormanainen Joni2

Affiliation:

1. ABB Switzerland Ltd

2. ABB Drives Oy

Abstract

In this paper, robustness and reliability differences related to the performance of the gate oxide of commercially-available 1200 V-rated planar and trench SiC MOSFETs have been investigated. Due to a thin gate oxide in SiC MOSFETs and to a naturally imperfect interface of the oxide layer (SiO2) with the SiC material, its quality and reliability become very important and could be a limiting factor of the SiC technology when compared to the Si one. A dedicated gate oxide step-by-step (VG SbS) tester has been prepared during which the gate voltage is varied with different profiles. Results of Fowler-Nordheim (FN), Time Dependent Dielectric Breakdown (TDDB) and three test runs of the VG SbS are presented in this paper. Both technologies show good reliability figures to allow the use in the application. Trench technology shows higher robustness limits whereas the extrapolated reliability at the rated gate voltage is superior for the planar one.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference12 articles.

1. T. Kimoto and J. A. Cooper, Fundamentals of Silicon Carbide Technology. Singapore: John Wiley & Sons Singapore Pte. Ltd, (2014).

2. J.A. Cooper, Jr., Oxides on SiC,, IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Device and Circuits, 1997, pp.236-243.

3. M. Beier-Moebius and J. Lutz, Breakdown of gate oxide of 1.2 kV SiC-MOSFETs under high temperature and high gate voltage,, PCIM Europe 2016, pp.1-8.

4. M. Beier-Moebius and J. Lutz, Breakdown of Gate Oxide of SiC-MOSFETs and Si-IGBTs under High Temperature and High Gate Voltage,, PCIM Europe 2017, pp.1-8.

5. J. Jormanainen et al., High Humidity, High Temperature and High Voltage Reverse Bias - A Relevant Test for Industrial Applications,, PCIM Europe 2018, pp.1-7.

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