Growth Parameters Determining the Type of Grown-In Defects in Czockralski Silicon Crystals
Author:
Affiliation:
1. University of Oxford
2. Kyoto University
3. Sitix Division
4. Shizuoka University
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://www.scientific.net/MSF.196-201.1713.pdf
Cited by 37 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
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2. Recognition and Imaging of Point Defect Diffusion, Recombination, and Reaction During Growth of Czochralski-Silicon Crystals;Journal of Electronic Materials;2020-05-20
3. Effect of density change at crystallization on a one-dimensional heat balance equation at solid–liquid interface;Japanese Journal of Applied Physics;2019-03-27
4. Computer Simulation of Concentration Distribution of Intrinsic Point Defect Valid for All Pulling Conditions in Large-Diameter Czochralski Si Crystal Growth;ECS Journal of Solid State Science and Technology;2019
5. Theoretical study of the impact of stress and interstitial oxygen on the behavior of intrinsic point defects in growing Czochralski Si crystals;Journal of Crystal Growth;2017-09
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