1D-ACAR Studies of As-Grown Impurity Centers in Silicon-Reference-Cited by-同舟云学术

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1D-ACAR Studies of As-Grown Impurity Centers in Silicon

Published:2001-11 Issue: Volume:82-84 Page:795-800
ISSN:1662-9779
Container-title:Solid State Phenomena
language:
Short-container-title:SSP

Author:

Arutyunov N.Yu.¹,Trashchakov V.Yu.²

Affiliation:

1. Institute of Electronics

2. Uzbek Academy of Sciences

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics

Link

https://www.scientific.net/SSP.82-84.795.pdf

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Positron annihilation on defects in silicon irradiated with 15 MeV protons;Journal of Physics: Condensed Matter;2012-12-10

2. Positron Probing of Point Radiation Defects in Proton - Irradiated FZ-Silicon Single Crystals;Solid State Phenomena;2011-08

3. Configuration of DV Complexes In Ge: Positron Probing of Ion Cores;Solid State Phenomena;2007-10

4. Atomic Environment of Positrons Annihilating in HT Cz-Si Crystal;Solid State Phenomena;2005-12

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