Implementation of 4H-SiC Pin-Diodes as Nearly Linear Temperature Sensors up to 800 K towards SiC Multi-Sensor Integration

Author:

Matthus C.D.1,Erlbacher Tobias2ORCID,Schöfer Bernhard1,Bauer Anton J.3,Frey Lothar1

Affiliation:

1. Friedrich-Alexander-University Erlangen-Nuremberg

2. Fraunhofer Institute for Integrated Systems and Device Technology (IISB)

3. Fraunhofer Institute of Integrated Systems and Device Technology (IISB)

Abstract

The usability of 4H-SiC pin-diodes as nearly linear temperature sensors up to 800 K is demonstrated. Two sensor concepts were evaluated including the constant current forward bias (CCFB) concept and the integrated proportional to absolute temperature (PTAT) concept. The maximum sensitivity was 4.5 mV/K for the CCFB and an applied current density of 118 nA/cm2. Additionally, this device can be used for UV detection, too, demonstrating the feasibility of 4H-SiC multi-sensor integration.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

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