Growth Mechanism of Copper Oxide Fabricaticated by Potentiostatic Electrodeposition Method

Abstract

This experiment is about fabrication of n-type Cu2O thin film on fluorine doped thin oxide (FTO) glass by using copper acetate based solution through potentiostaticelectrodeposition. A range of deposition time was carried out from 20 to 40 minutes and the results were obtained. The other parameters such as potential deposition, bath temperature and pH value of solution were kept constant for-0.125Vvs Ag/AgCl, 60 °C and pH 6.3, respectively. It was found that the optimum deposition time for growth mechanism of n-type Cu2O thin film was 30 minutes. Structural, morphologicaland optical properties were characterized by using X-ray diffraction (XRD), Field Emission Scanning Electron Microscope (FE-SEM), and Ultraviolet and visible Absorption Spectroscopy (UV-Vis), respectively. The successfully fabrication of n-Cu2O was confirmed using PEC measurement result.