Abstract
A study was made on the micromachining of GaAs in a H3PO4:H2O2:H2O solution with
composition 1:9:1. In the first part etch rates and morphologies of etched structures were evaluated
in order to characterize the anisotropy. The second part was devoted to numerical simulations of 3D
etching shapes. For this purpose the database of the simulator TENSOSIM was determined.
Comparison of theoretical 3D etching shapes with experimental shapes of micromachined structures
supports the validity of the proposed database. So the simulator TENSOSIM is a convenient CAO
tool for the design of new GaAs MEMS.
Publisher
Trans Tech Publications Ltd
Cited by
2 articles.
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